2.5G 1470~1610nm DFB EML LD Chip-DFB Chip, APD Chip, Optical Switch, Optical Isolator

2.5G 1470~1610nm DFB EML LD Chip

D470X02R3B/ D490X02R3B/ D510X02R3B/ D530X02R3B/ D550X02R3B/ D570X02R3B/ D590X02R3B/ D610X02R3B Series Products are directly modulated 2.5Gbps DFB edge emitting laser diode chips with 1470nm, 1490nm, 1510nm, 1530nm, 1550nm, 1570nm, 1590nm and 1610nm wavelength options. Operating temperature range is from - 40°C to +85°C

Parrameters	Unit	Min.	Max.
Operating Temperature	℃	-40	85
Laser Forward Current	mA	--	120
Laser Reverse Bias	V	--	2
Storage Temperature*	℃	-40	100
Note: *Non condensation on chip.

Parameter	Symbol	Test Conditions	Min.	Typical	Max.	Unit
Operating Temperature	T	--	-40	--	85	℃
Threshold Current	I_TH	T=25℃	--	6	10	mA
Threshold Current	I_TH	T=85℃	--	25	35	mA
Operating Current	I_OP	CW,P_o=5.0mW, T=25℃	--	20	25	mA
Operating Current	I_OP	CW,P_o=5.0mW, T=85℃	--	60	80	mA
Optical Output Power	P_O	CW	8	--	--	mW
Slope Efficiency	SE	T=25°C	0.28	--	--	mW/mA
Slope Efficiency	SE	T=85°C	0.15	--	--	mW/mA
Forward Voltage	V_F	P_o=5.0mW	--	1.2	1.6	V
Center Wavelength	λc	P_o=5.0mW,T=25°C	See Options	1470 1490 1510 1530 1550 1570 1590 1610	See Options	nm
Wavelength Temp Coefficient	dλ/dT	--	--	0.1	0.12	nm/℃
SpectralWidth(-20dB)	d_λ	--		0.1	1.0	nm
Side Mode Supp Ratio	SMSR	P_o=5.0mW	38	45	--	dB
Rise Time	T_R	Ppeak= 5.0mW, 20% to 80%	--	--	100	ps
Fall Time	T_F	Ppeak= 5.0mW, 20% to 80%	--	--	100	ps
Far field(Vertical)	ɵ_v	--	25	28	31	degrees
Far field(Horizontal)	ɵ_h	--	17	20	31	degrees
Relaxation Oscillation Frequency	F_R	P_o=5.0mW	6	--	--	GHz

图片关键词

Example: E-470-A-02-R3-8-280-T means electroabsorption modulated laser chip, wavelength1467nm~1473nm, 2.5Gbs, working temperature -40*C to 85'℃, Minimum Slope 0.28@25°C, thepacking method Chip on tape.