Parrameters | Unit | Min. | Max. | |
| Operating Temperature | ℃ | -20 & -40 | 85 | |
| Laser Forward Current | mA | -- | 120 | |
| Laser Reverse Bias | V | -- | 2 | |
| Storage Temperature* | ℃ | -40 | 100 | |
Note: *Non condensation on chip. | ||||
| Parameter | Symbol | Test Conditions | Min. | Typical | Max. | Unit |
| Operating Temperature | T | -- | See Options | -- | 85 | ℃ |
| Threshold Current | ITH | T=25℃ | -- | 5 | 10 | mA |
| T=85℃ | -- | 25 | 40 | |||
| Operating Current | IOP | CW,T=25°C | 30 | -- | -- | mA |
| Optical Output Power | PO | CW | 7 | -- | -- | mW |
| Slope Efficiency | SE | T=25°C | 0.35 | 0.5 | -- | mW/mA |
| Forward Voltage | VF | IOP= ITH+20mA | -- | 1.1 | 1.6 | V |
| Center Wavelength | λc | CW,T=25°C | See Options | 1270 1290 1310 1330 1350 1370 | See Options | nm |
| Wavelength Temp Coefficient | dλ/dT | -- | -- | 0.09 | 0.1 | nm/℃ |
| SpectralWidth(-20dB) | dλ | -- | 0.1 | 1.0 | nm | |
| SideModeSuppRatio | SMSR | IOP | 40 | 45 | -- | dB |
| Rise Time | TR | IOP, 20% to 80% | -- | 50 | -- | ps |
| Fall Time | TF | -- | 50 | -- | ps | |
| Far field(Vertical) | ɵv | -- | 16 | 19 | 22 | degrees |
| Far field(Horizontal) | ɵh | -- | 19 | 22 | 25 | degrees |
| Bandwidth | BW | T=25°C, EO3-dB bandwidthat IOP | 8 | 10 | -- | GHz |
Example: E-270-A-02-R3-B-350-T means electroabsorption modulated laser chip, wavelength1267nm~1273nm, 10Gbs, working temperature -40'C to 85'℃, Minimum Slope 0.35@25°℃, thepacking method Chip on tape.
Supports 6 wavelengths (1270nm~1370nm)
Uncooled operation from-40℃(or-20℃) to +85°C
Designed for Telcordia GR-468
◆ light source
◆ Optical communication
◆ SFP Transceivers
Specializes in high level semiconductor laser diode chips development, production and packaging, focus on both Cloud Data Center and Telecom Networking inter-connectivity...
Guanglong S&T Zone, No.8 High-tech Industry Park Chaoyang Road, Guilin ,Guangxi, China
+86-133-4600-8527
alan.shizz@glsun.com
